Applied Mathematics & Information Sciences
Ultra High Voltage Device RESURF LDMOS Technology on Drain- and Source-Centric Design Optimization
We present drain and source-centric design optimizations of a linear P-top and dual-channel conduction path LDMOS (lateral double-diffused metal-oxide semiconductor) structure for low specific on-resistance (Ron.sp) powered transistor devices. The design was simulated using TCAD tools, and a real silicon device was fabricated successfully in accordance with the simulation. The 3D effect in the cylindrical layout with the linear P-top doping profiles was designed using an analytical model to obtain optimal charged balance for the drain- and source-centric regions. The silicon result, with an optimized P-top doping process window, achieved a breakdown voltage (BV) of 842 V, which was higher than 800 V. Thus, the use of a dual-channel conduction path technique with an N-top layer implanted over the P-top can improve Ron.sp by 25% without compromising BV.
Digital Object Identifier (DOI)
Ming Yang, Shao; Chen, Po-An; and Pan, CH
"Ultra High Voltage Device RESURF LDMOS Technology on Drain- and Source-Centric Design Optimization,"
Applied Mathematics & Information Sciences: Vol. 10:
6, Article 20.
Available at: https://digitalcommons.aaru.edu.jo/amis/vol10/iss6/20