Journal of Engineering Research
DOI
10.70259/engJER.2024.851863
Abstract
This paper presents a numerical analysis evaluating the performance of thermoelectric (TE) modules utilizing π΅π2ππ3 and SiGe materials under both constant heat flux and constant temperature difference conditions. A three-dimensional model of TEG was developed and simulated using ANSYS FLUENT 19-R2. The model's accuracy was validated against existing literature. The study investigated the influence of these materials on power output, conversion efficiency, voltage, and temperature distribution across various operating conditions. The results demonstrate a linear relationship between heat flux/temperature difference and voltage/power output for both materials. The findings provide valuable insights for optimizing high-performance TE modules operating under constant heat flux conditions. As result of semiconductor π΅π2ππ3 material At Q=14000 W/π2, the conversion efficiency is 7.73 % and at πβ = 227 ΒΊC, the conversion efficiency is 5.93 %, As result of semiconductor SiGe material at Q=220 KW/π2, the conversion efficiency is 5.88 % and at πβ = 1027 ΒΊC, the conversion efficiency is 4.61 %.
Recommended Citation
Harb, Abd El-Moneim A.; Elsayed, Khairy; Osman, Ahmed S.T.; and Abdo, Ahmed
(2024)
"Numerical analysis to evaluate the performance based on Bi2Te3 and SiGe thermoelectric module,"
Journal of Engineering Research: Vol. 8:
Iss.
5, Article 12.
DOI: 10.70259/engJER.2024.851863
Available at:
https://digitalcommons.aaru.edu.jo/erjeng/vol8/iss5/12