Zinc Oxide ( ZnO) UV detector thin films have been prepared on nanospikes silicon layer with different etching time by spray pyrolysis using 0.1 M aqueous solution of Zinc acetate. The Hall measurements for ZnO films grown on the porous silicon layer, show that they were oriented in the c – axis and it is found to be a p – type semiconductor. This behavior may attribute to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer. The ZnO layer type, resistivity and the carrier mobility were measured with different etching time to the n-type silicon wafer. The optimum etching time for the fabrication of fast ZnO UV photoconductive detector was determined. The deposited ZnO film was coated by nanosheet of polyamid polymer to improve the photoresponsivity of the detector to 2.24A/W. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to about 180 μs. The final device was tested with high speed pulsed nitrogen laser.
M. Suhail, A.
"Fast Response ZnO/porous Silicon UV Photoconductive Detector,"
International Journal of Thin Film Science and Technology: Vol. 1
, Article 4.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol1/iss1/4