The three-photon absorption (3PA) in nanostructure wide-band gap ZnO semiconductor material is observed under high intensity femtosecond Titanium-Sapphire laser of 800 nm wavelength excitation. The ZnO film was prepared by chemical spray pyrolysis technique with substrate temperature of 400oC. The optical properties concerning the absorption, transmission, reflection, Raman and the photoluminescence spectra are studied for the prepared film. The structure of the ZnO film was tested with the X-Ray diffraction and it was found to be a polycrystalline with recognized peaks oriented in (002), and (102). The measured of three photon absorption coefficient was found to be about 0.0166 cm3/Gwatt2, which is about five times higher than the bulk value.
K. Jamal et al, R. and K. Jamal et al, R.
"Three-photon absorption in ZnO film using ultra short pulse laser,"
International Journal of Thin Film Science and Technology: Vol. 1
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Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol1/iss2/3