Features of n-SnO2 / p-Si Structural Heterojunction Manufactured by the Chemical Steam-Gas Deposition Method

Authors

Mardonbek Ulugbekovich Hajiev, Physical Technical Institute, Uzbekistan Academy of Sciences, 100084 Tashkent, UzbekistanFollow
Rustam Rashidovich Kabulov, Physical Technical Institute, Uzbekistan Academy of Sciences, 100084 Tashkent, UzbekistanFollow

Abstract

By the method of chemical vapor-gas deposition (CVD) SnO2 layers have been grown at the temperature of 170-500°С on the surface of p-Si single crystals with the (111) direction; the wafers had a thickness of 500 μm. A special evaporator with a temperature of 80-120°C has been used to obtain saturated steam in a quasi-closed reactor. The grown n- SnO2 layers had a microcrystalline structure. Based on the analysis of X-ray diffraction and the dark current – voltage characteristics, an energy-band diagram of the n-SnO2/p-Si heterostructure is constructed.

Recommended Citation

Ulugbekovich Hajiev, Mardonbek and Rashidovich Kabulov, Rustam (2021) "Features of n-SnO2 / p-Si Structural Heterojunction Manufactured by the Chemical Steam-Gas Deposition Method," International Journal of Thin Film Science and Technology: Vol. 10 : Iss. 2 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol10/iss2/2