By the method of chemical vapor-gas deposition (CVD) SnO2 layers have been grown at the temperature of 170-500°С on the surface of p-Si single crystals with the (111) direction; the wafers had a thickness of 500 μm. A special evaporator with a temperature of 80-120°C has been used to obtain saturated steam in a quasi-closed reactor. The grown n- SnO2 layers had a microcrystalline structure. Based on the analysis of X-ray diffraction and the dark current – voltage characteristics, an energy-band diagram of the n-SnO2/p-Si heterostructure is constructed.
Ulugbekovich Hajiev, Mardonbek and Rashidovich Kabulov, Rustam
"Features of n-SnO2 / p-Si Structural Heterojunction Manufactured by the Chemical Steam-Gas Deposition Method,"
International Journal of Thin Film Science and Technology: Vol. 10
, Article 2.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol10/iss2/2