In the preparation of Si-CNT (Silicon – Carbon Nano Tubes) without a catalyst, the plasma Sputtering Techniques were used to prepare Nano diodes for use in Nano-electronic applications. For the Si-CNT junction, the effect of current and carbon layer sputtering on the C-V properties has been studied. Carbon layers were rendered on silicon wafers by the plasma sputtering in the Argon gaseous atmosphere with various thicknesses and deposition currents without catalysts by deposition of pure graphite rod carbon. There were two methods used to prove CNT and study its structural properties, Raman spectroscopy and Scanning electron microscope (SEM), the two methods were used. C-V Characteristics indicate that: increasing CNT thickness increases the potential of the same sputtering current by increasing the length and diameter of the carbon nanotube and interacting with them which contributes to grain mixing and mixing. Growing the sputtering current has no impact on the low thickness layer due to lower sensitivity to sputtering plasma, however it affects thick layers as SEM and AFM images demonstrate.
M. E. Al-Faidhi, Anwar; M. Mustafa, Bassam; and M. Uonis, Mohammad
"The Effect of Sputtering Current and Carbon Layer Thickness on the C-V Characteristics of Si-CNT,"
International Journal of Thin Film Science and Technology: Vol. 10
, Article 8.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol10/iss2/8