Effect of Mn Doped and Mn+Sn Co-doping on the Properties of ZnO Thin Films

Authors

K. Salim, Laboratoire d’Elaboration et de Caractérisation des Matériaux, département d’électronique, Université Djilali Liabes, BP89, Sidi Bel Abbés 22000. AlgeriaFollow
W. Azzaoui, Laboratoire d’Elaboration et de Caractérisation des Matériaux, département d’électronique, Université Djilali Liabes, BP89, Sidi Bel Abbés 22000. AlgeriaFollow
M. N. Amroun, Laboratoire d’Elaboration et de Caractérisation des Matériaux, département d’électronique, Université Djilali Liabes, BP89, Sidi Bel Abbés 22000. AlgeriaFollow
A. H. Kacha, Laboratoire de Micro-electronique Appliquee, Universite Djillali Liabes, 22000 Sidi Bel Abbes, AlgeriaFollow

Abstract

Mn doped and Mn/Sn co-doped ZnO thin films nanoparticles have been successfully synthesized by Spray pyrolysis technique at 300 0C. X-ray diffraction study showed that all the films have the hexagonal wurtzite structure with the preferential orientation (002) plane. The optical measurement exhibited an increase in the average transmittance from 77% for Mn doped ZnO to 84% for Mn/Sn co-doped ZnO films in the visible region. Further the optical band gap changes from 3.18 eV for undoped ZnO films to 3.27 eV for Mn/Sn co-doped ZnO films. The electrical resistivity has decreased with incorporation of Mn and Sn ions to reach the minimum value of 11 (Ω.cm) for Mn doped ZnO films

Recommended Citation

Salim, K.; Azzaoui, W.; N. Amroun, M.; and H. Kacha, A. (2021) "Effect of Mn Doped and Mn+Sn Co-doping on the Properties of ZnO Thin Films," International Journal of Thin Film Science and Technology: Vol. 10 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol10/iss3/13