Copper nitride (Cu3N) thin films have been implanted onto an electron beam evaporated films of indium tin oxide (ITO) from Cu metal target using reactive dc Magnetron Sputtering (dcMS) technique in a nitrogen/argon atmosphere at room temperature. The implantation parameter was kept constant excepting the implantation time. The effect of implantation time upon microstructural, morphological, electrical, and optical properties have been studied. The elemental composition of the as-deposited and Cu3N implanted has been studied by using the EDXS technique, and the spectrum shows peaks belonging to In, Sn, O, Cu, and N. A zinc blend structure was observed for all the investigated films with no sign of impurities. The optical direct energy bandgap E_g^opt is found to decreases from 3.49 eV to 2.62 eV with increasing the implantation time of Cu3N. The refractive index n is increased with increasing the exposure time of implantation. The refractive index has abnormal behavior in the infrared region due to the strong absorption in this region that appears in transmission spectra. The electrical resistivity decreases from 1908.22 .cm to 165.24 .cm with increasing the duration time of implantation.
Hassan, A.M.; Kotp, E.F.; and Shaaban, E.R.
"Effect of Implantation Time of Cupper Nitride onto ITO Thin Films: Structural, Morphological, Electrical, and Optical Properties,"
International Journal of Thin Film Science and Technology: Vol. 10
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Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol10/iss3/3