On variation of Rate of Growth of Epitaxial Layers by Varia- tion of Substrate Heating

Authors

E. L. Pankratov, Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia\\ Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod, 603950, RussiaFollow

Abstract

In this paper, we estimate the rate of growth of epitaxial layers from the gas phase. We study dependence of the rate on the value of the heating of the sub-strate. By using the previously introduced approach of mass and heat transfer analysis, analytical dependencies of the considered rate on the parameters were obtained. In this paper based on recently introduced approach we analyzed mass and heat transport during growth of epitaxial layers in reactors for epitaxy from gas phase with sloping keeper with account native convection. Based on recently introduced approach we estimate rate of growth of films and analyzed depend-ences of the rate on physical and technological parameters.

Recommended Citation

L. Pankratov, E. (2021) "On variation of Rate of Growth of Epitaxial Layers by Varia- tion of Substrate Heating," International Journal of Thin Film Science and Technology: Vol. 10 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol10/iss3/8