The Mechanism of Charge Flow and Electric Current in Porous GaN Thin Films during Photo Electrochemical Etching

Authors

K. Al-Heuseen, Department of Applied Science, Ajloun University College, Al-Balqa Applied University JordanFollow
A.I. Aljameel, Department of Physics, College of Science, Imam Mohammad Ibn Saud Islamic University (IMSIU), 11623 Riyadh, Saudi ArabiaFollow
M. Kh. Alquran, Department of Applied Science, Ajloun University College, Al-Balqa Applied University JordanFollow

Abstract

In this work nano-porous structures of n-GaN was fabricated using simple photoelectrochemical etching techniques. The electrolyte was H2SO4:H2O2 under direct current density of 5 mA/cm2 for 30 min. Scanning electron microscopy (SEM) has been used to studied the morphology, the size, and the shape of the pores of n-GaN nanostructures. The mechanism of charge and current flow in photoelectrochemical etching process was investigated deeply. The electrical and chemical behaviour of the electrolyte-GaN junction has been studied. The energy diagram of an n-GaN and the electrolyte was used to illustrate the charges flow mechanism. A simple model depend on two parallel plate capacitors was used to understand the etching mechanism at the GaN electrolyte interface. This mechanism was confirmed by J-t curve.

Recommended Citation

Al-Heuseen, K.; Aljameel, A.I.; and Kh. Alquran, M. (2022) "The Mechanism of Charge Flow and Electric Current in Porous GaN Thin Films during Photo Electrochemical Etching," International Journal of Thin Film Science and Technology: Vol. 11 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol11/iss1/18