Zinc oxide (ZnO) thin films deposited on glass substrates at 300 °C by spray pyrolysis technique and then annealed at different temperatures ranging from 300 to 400 °C for 1 hour in air. The effects of the annealing temperature on the structural, optical and electrical properties of the ZnO thin films were studied. X-ray diffraction suggests that a hexagonal wurtzite structure with a strong (002) preferred orientation and the crystallite size increases with annealing temperature. The optical transmittance spectra showed transmittance higher about 82% in Vis and IR region of the annealed films at 375 °C. The direct optical band gap rises from 3.17 eV to 3.27 eV for as-deposited and annealed ZnO thin film at 375 °C, respectively. The resistivity values of the samples have changed from 6.27.10+2 to 7.50.10+1 (Ω.cm) with annealing temperature.
Salim, K. and N. Amroun, M.
"Study of the Effects of Annealing Temperature on the Properties of ZnO Thin Films Grown by Spray Pyrolysis Technique for Photovoltaic Applications,"
International Journal of Thin Film Science and Technology: Vol. 11
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Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol11/iss1/3