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International Journal of Thin Film Science and Technology

International Journal of Thin Film Science and Technology

Abstract

ZnO Thin films were deposited on glass substrates at 350 ± 10 0C by pyrolysis spray technique. A very thin layer of SnO2 was deposited under ZnO films for the purpose of getting a bilayer thin SnO2/ ZnO. A thermal annealing was carried out for the bilayer with a temperature of 350 0C for one hour. The structural, optical and electrical properties of monolayer ZnO films and SnO2/ZnO bilayer thin films were investigated. X-ray diffraction confirmed the hexagonal wurtzite structure of ZnO films, and the hexagonal tetragonal structure of SnO2/ZnO bilayer films. The optical measurement showed a rise of the average transmittance from 81 % to 94 % for SnO2/ZnO annealed bilayer films. The optical band gap varied between 3.22 to 3.31 eV for SnO2/ZnO annealed bilayer films. The maximum electrical conductivity of 17.85 (Ω .cm-1) has been observed for SnO2/ZnO annealed bilayer films.

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