The energy and the angular distribution of atoms are considered two parameters most influential in optimizing the sputtering and subsequently on the deposit, resulting in films having the desired properties (homogeneity in thickness, composition identical to that of the evaporated material). Moreover, a great influence on the shape and quality of thin films is obtained. In this work, a simulation with the Monte Carlo (MC) software SRIM (Stopping and Range of Ions in Matter) is used to calculate the sputtering yield for different energies, and angular distributions of atoms of photovoltaic devices materials (CdS and CIGS) bombarded by different gas particles (Ar, Xe, and Ne). Our results showed that when arriving at a certain energy value Emax, the sputtering yield will be in maximum Y1max. Applying this Emax and variation in the angular distribution, we will obtain θmax corresponding to the maximum sputtering yield Y2max. These two values (Emax, θmax) give the maximum of atoms sputtered, and as a result, the films will be uniform. The obtained results are in very high agreement with other works, which validates our calculations.
"Deposition of Thin Films Materials used in Modern Photovoltaic Cells,"
International Journal of Thin Film Science and Technology: Vol. 11
, PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol11/iss3/8