Effect of RF Sputtered on Characterization of SrTiO3 Thin Film

Authors

Hamed A. Gatea, Department of Medical Physics, Al-Mustaqbal University College 51001, Hillah, Babylon, IraqFollow
Hashim Abbas, Department of Optics, Collage of Health and Medical Technology, Al-Ayen University, Thi-Qar, IraqFollow
Saja hameed kareem, Collage of Pharmacy, National University of Science and Technology, Dhi Qar, IraqFollow

Abstract

Thin films of SrTiO3 (STO) were formed on p-type Si(100) substrates using rf magnetron sputtering at different substrate temperatures. The structural and electrical properties were investigated. The thickness of the films was between 300 and 500 nm, and the substrate temperature was always 550°C. The XRD pattern shows the cubic phase for SrTiO3 thin film. Using capacitance-voltage, current-voltage, and admittance spectroscopy, metal-insulator-semiconductor (Al/STO/p- Si/Al) structures were fabricated and characterized. The dielectric constant decreased with increasing frequency. The impedance decreased with increasing frequency.

Recommended Citation

A. Gatea, Hamed; Abbas, Hashim; and hameed kareem, Saja (2023) "Effect of RF Sputtered on Characterization of SrTiO3 Thin Film," International Journal of Thin Film Science and Technology: Vol. 12 : Iss. 2 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol12/iss2/8