Direct deposition of amorphous copper-antimony sulphide, CuSbS2 thin films on glass substrates using solution growth technique is reported. Structural analysis, morphological studies and elemental composition of the films were investigated by means of x-ray diffraction (XRD) technique, scanning electron microscopy (SEM) and energy-dispersive analysis x-ray spectroscopy (EDAX) respectively. The effect of dip time on each of these properties was examined. The thickness of the films was estimated from surface profile analysis and was found to be in the range of 1.0μm to 1.45μm depending on the dip time. The resistance of the films was obtained from V/I values given by the surface profiler. The films were found to have high resistance value in the range of 2.26 x 108Ω to 2.94 x 108Ω depending on the dip time. The resistivity of the material was obtained by four-point probe method and found to increase from 1.33 x 103Ω-m to 1.48 x 103Ω-m as dip time increases from 12hr to 48hr respectively. Optical characterization was performed on the films using an AVASPEC-2048 UV-VIS-NIR spectrophotometer in the wavelength range of 200-900nm. Optical studies reveal a decrease in the direct band gap of the material from 2.85eV to 2.05eV for the CuSbS2 thin films grown in this research depending on the dip time.
Diemiruaye, M., Jeroh,
"A Study on The Structural, Optical and Electrical Properties of CuSbS2 Thin films and Possible Applications,"
International Journal of Thin Film Science and Technology: Vol. 2
, Article 7.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol2/iss1/7