Ge:Sb films with thickness (500nm) have been deposited by thermal evaporation technique on glass substrate and c-GaAs wafer at room temperature, under vacuum of 10-5 mbar with rate of deposition equal to 10Ǻ/sec. These films have been annealed at different annealing temperatures (100, 200)0C. The structural characteristic of the films prepared on glass and GaAs substrates have been studied by using X-ray diffraction, the tests show that all the films have amorphous structure for all annealing temperatures. The C-V measurement of a-Ge:Sb/c-GaAs heterojunciton at frequency 1 KHz and we found built – in potential (Vbi)increase from 0.645 V to 0.84 V with Taincrease from RT to 200 0C. Also from I-V characteristic we found that the quality factor decreases from 2.641 to 2.358 for same annealing temperature, this may be interpreted in term improvement of crystal structure with heat treatment.
A.Salah, M.F.Alias, A.Kadhum, and H.Kh.Al-Lamy
"Characteristic of I-V , C-V for a-Ge:Sb/c-GaAs Hetrojunction,"
International Journal of Thin Film Science and Technology: Vol. 2
, Article 3.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol2/iss2/3