Gallium Arsenide alloy has been grown successfully by single zone computerized furnace. The grown alloy have been crushed and deposited on glass substrate by flash evaporation technique with substrate temperature of 473 K, the film thickness was about 340 nm, the films annealed at 573 K for different duration times of annealing in the range of 60, 120 and 180 minutes. The experimental percentage concentrations of Gallium and Arsine are 0.48 and 0.52 respectively. X-ray diffraction spectra show that the as deposited film was amorphous. Amorphous film has the highest value of activation energy and the electrical conductivity, which they decreased after increasing duration times of annealing. Thermoelectric power measurements show that all prepared films are n-type. Thermal energy has decreased by increasing the duration times of annealing. The smallest value achieved by amorphous film. The hopping energy increased by increasing the duration times of annealing and the highest value has achieved by amorphous film.
A. Razooqi, Mohammed; A. Abadullah, Rasha; A. Adem, Kadhim; and M. Saeed, Nada
"Growth of GaxAs1-x Alloy and Characterized the Structural and Electrical Properties of Flashed Thin Films,"
International Journal of Thin Film Science and Technology: Vol. 2
, Article 4.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol2/iss2/4