Kinetics of nonsymmetrical impurity segregation at thin film boundaries

Authors

I.M. Davydova, Donetsk Institute for Physics and Engineering named after A.A. Galkin NAS of UkraineFollow
T.N. Melnik, Donetsk Institute for Physics and Engineering named after A.A. Galkin NAS of UkraineFollow
V.M. Yurchenko, Donetsk Institute for Physics and Engineering named after A.A. Galkin NAS of UkraineFollow

Abstract

Theoretical and numerical analysis is presented for kinetics of impurity segregation at the boundaries of a thin layer of substance dividing two different materials. Time dependences of boundary impurity concentrations and concentration profiles within the film have been obtained. Depending on the energy of impurity interaction with the boundaries and the temperature, some criteria were established to predict probable realization of segregation process. The time of exhausting of areas adjusting segregation layers and the width of the exhausted zone near the boundaries was evaluated.

Recommended Citation

Davydova, I.M.; Melnik, T.N.; and Yurchenko, V.M. (2013) "Kinetics of nonsymmetrical impurity segregation at thin film boundaries," International Journal of Thin Film Science and Technology: Vol. 2 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol2/iss3/6