X-ray Diffraction Spectroscopy Studies of CuIn2n+1S3n+2 Thin Films

Authors

B. Khalfallah, Laboratoire de Photovolta¨ıque et Matriaux Semi-conducteurs - ENIT - Universit Tunis ElManar, BP 37, Le belv´ed`ere 1002-, TunisFollow
N. Khemiri, Laboratoire de Photovolta¨ıque et Matriaux Semi-conducteurs - ENIT - Universit Tunis ElManar, BP 37, Le belv´ed`ere 1002-, TunisFollow
D. Abdelkader, Laboratoire de Photovolta¨ıque et Matriaux Semi-conducteurs - ENIT - Universit Tunis ElManar, BP 37, Le belv´ed`ere 1002-, TunisFollow
M. Kanzari, Laboratoire de Photovolta¨ıque et Matriaux Semi-conducteurs - ENIT - Universit Tunis ElManar, BP 37, Le belv´ed`ere 1002-, TunisFollow

Abstract

CuIn2n+1S3n+2 (where n = 0, 1, 2, 3 and 5) thin films were deposited at different substrate temperatures (30, 75, 100, 150 and 200 ◦C) by vacuum evaporation. The films were characterized for their structural properties by using X-ray diffraction (XRD). From the XRD data, we calculated the grain size, the lattice strain, the lattice parameters and the dislocation density for the preferential orientation of CuIn2n+1S3n+2 thin films. The effect of the substrate temperature on the structural crystalline quality of the films was also investigated.

Recommended Citation

Khalfallah, B.; Khemiri, N.; Abdelkader, D.; and Kanzari, M. (2014) "X-ray Diffraction Spectroscopy Studies of CuIn2n+1S3n+2 Thin Films," International Journal of Thin Film Science and Technology: Vol. 3 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol3/iss1/2