Study of Structural, Morphological and Optical Properties of Sb2S3 Thin Films Deposited by Oblique Angle Deposition

Authors

Chaffar Akkari Ferid, Laboratoire de Photovolta¨ıques et Mat´eriaux de Semi-conducteurs-ENIT-Universit´e de Tunis el Manar, BP 37, le belv´ed`ere1002-Tunis, TunisieFollow
I. Trabelsi, Laboratoire de Photovolta¨ıques et Mat´eriaux de Semi-conducteurs-ENIT-Universit´e de Tunis el Manar, BP 37, le belv´ed`ere1002-Tunis, TunisieFollow
A. Sinaoui, Laboratoire de Photovolta¨ıques et Mat´eriaux de Semi-conducteurs-ENIT-Universit´e de Tunis el Manar, BP 37, le belv´ed`ere1002-Tunis, TunisieFollow
F. Aousgi, Laboratoire de Photovolta¨ıques et Mat´eriaux de Semi-conducteurs-ENIT-Universit´e de Tunis el Manar, BP 37, le belv´ed`ere1002-Tunis, TunisieFollow
M. Kanzari, Laboratoire de Photovolta¨ıques et Mat´eriaux de Semi-conducteurs-ENIT-Universit´e de Tunis el Manar, BP 37, le belv´ed`ere1002-Tunis, TunisieFollow

Abstract

Sb2S3 thin films were deposited by thermal evaporation method with oblique angle deposition technique. During the deposition, the substrate temperature was maintained at Ts = 180 ◦C and the deposition angle was fixed at a = 0◦, 20◦, 40◦, 60◦, 70◦ and 85◦. X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and UV- Vis- NIR spectra were used to characterize the structural, surface morphology and optical properties respectively of the layers. X-ray diffraction spectra indicated that all the deposited Sb2S3 films are amorphous. The band gaps of the thin films were found to be direct allowed transitions and are around 1.87 eV. In addition it was found that the refractive index decreases from 2.98 for a = 0◦ to 2.28 for a = 85◦. The relationship between the flux incident angle a and the column angle b was also explored.

Recommended Citation

Akkari Ferid, Chaffar; Trabelsi, I.; Sinaoui, A.; Aousgi, F.; and Kanzari, M. (2014) "Study of Structural, Morphological and Optical Properties of Sb2S3 Thin Films Deposited by Oblique Angle Deposition," International Journal of Thin Film Science and Technology: Vol. 3 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol3/iss1/4