The Effect of the Growth Condition on the Properties of the New Material Sn3Sb2S6 Thin Films

Authors

M. Kanzari, Laboratoire de Photovolta¨ıques et Mat´eriaux de Semi-conducteurs-ENIT-IPEITunis Montfleury-Universit´e de TunisFollow
A. Larbi, Laboratoire de Photovolta¨ıques et Matriaux de Semi-conducteurs-ENIT-Universit de Tunis el Manar, BP 37, le belv´ed`ere1002-Tunis, TunisieFollow
N. Khedmi, Laboratoire de Photovolta¨ıques et Matriaux de Semi-conducteurs-ENIT-Universit de Tunis el Manar, BP 37, le belv´ed`ere1002-Tunis, TunisieFollow

Abstract

Sulfosalt Sn3Sb2S6 material was synthesised by the horizontal Bridgman method. X-rays diffraction analysis of the powder showed that only homogenous Sn3Sb2S6 phase is present in the ingot. Sn3Sb2S6 thin films were deposited by a single source vacuum thermal evaporation with different thicknesses on glass substrates. The optical and structural properties of the films were studied as a function of thicknesses and temperature substrates. It is interest to note that Sn3Sb2S6 films exhibit polycrystalline structures along (416) preferred plane without heating the substrates. In addition, we note that as the thickness increases from 150 nm to 430 nm the average grain size increases from 190 to 350 °A. The samples have direct bandgap energies of 1.5 - 1.75 eV. Furthermore, we found that the absorption coefficient in all cases reached 104 cm−1. So, Sulfosalt Sn3Sb2S6 thin films could be used as a potential candidate in may technological applications such as photovoltaic solar cells

Recommended Citation

Kanzari, M.; Larbi, A.; and Khedmi, N. (2014) "The Effect of the Growth Condition on the Properties of the New Material Sn3Sb2S6 Thin Films," International Journal of Thin Film Science and Technology: Vol. 3 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol3/iss1/5