Physical Properties of Undoped and Doped ZnO Thin Films Prepared by Spray Pyrolysis for Photovoltaic Application

Authors

F.Chouikh, Laboratory of materials study, faculty of engineering science, Department of physics, University of Jijel 18000, Algeria.Follow
Yamina Beggah, Laboratory of materials study, faculty of engineering science, Department of physics, University of Jijel 18000, Algeria.Follow
Mohammed Salah Aida, Laboratory of Thin films and Interface, Faculty of Science, Department of Physics, University Mentouri of Constantine 25000, AlgeriaFollow

Abstract

Al doped ZnO thin films were synthesized by ultrasonic spray pyrolysis technique. The concentration ratio of [Al]/[Zn] was varied from 1 to 5 %mol in the starting solution, in order to investigate the effect of doping ratio on the structural optical and electrical films properties. The films thicknesse was found in the range 900-1100 nm. X-ray diffraction analysis indicates that the films doped with Al using aluminium chloride (AlCl3.H2O) has a textured structure with (002) preferred orientation, .The grain size increases with Al concentration from 28.91 to 59.11 nm. The average optical transmittance of all films, regardless the doping concentration, was higher than 80% in the visible range, the values of optical direct band gap and disorder energy(Urbach energy) were deduced from the absorption spectra . From the electrical measurements carried by two probes technique, we concluded that the electrical conductivity of doped ZnO layers higher than that of undoped layers.

Recommended Citation

F.Chouikh; Beggah, Yamina; and Salah Aida, Mohammed (2014) "Physical Properties of Undoped and Doped ZnO Thin Films Prepared by Spray Pyrolysis for Photovoltaic Application," International Journal of Thin Film Science and Technology: Vol. 3 : Iss. 2 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol3/iss2/4