Structural and Optical Prosperities of Nickel Doped Zinc Oxide Thin Films Grown by Low Cost Modified SILAR Method

Authors

M. Karunakaran, Department of Physics, Sethupathy Govt. Arts College, Ramanathapuram – 623 502, India.Follow
R. Chandramohan, Department of Physics, Sree Sevugan Annamalai College, Devakottai - 630 303, IndiaFollow
S. Balamurali, Department of Physics, Sree Sevugan Annamalai College, Devakottai - 630 303, IndiaFollow
S. Gomathi, Department of Physics, Sree Sevugan Annamalai College, Devakottai - 630 303, IndiaFollow
K. Kabila, Department of Physics, Modern Arts and Science College, Jayankondam – 621 802, IndiaFollow
T. Mahalingam, Department of Physics, Karunya University, Coimbatore – 641 114, IndiaFollow

Abstract

The effect of annealing in Ni doped Zinc oxide (ZnO) semiconductor thin films grown by a modified SILAR method is presented in this study. The XRD diffraction patterns reveal good crystalline quality without any appreciable changes from pure ZnO films and are genuinely polycrystalline with a hexagonal wurtzite structure. Scanning electron microscopic (SEM) investigation suggested that both the shape of the crystals and the texture of the films were highly influenced by the SILAR method. The SEM morphology shows the formation of vertical nanorods and interestingly, Ni doped ZnO shows fiber-like structures with good uniformity. These nano thin films are promising candidate for solar cells, photo detectors, and gas sensors.

Recommended Citation

Karunakaran, M.; Chandramohan, R.; Balamurali, S.; Gomathi, S.; Kabila, K.; and Mahalingam, T. (2014) "Structural and Optical Prosperities of Nickel Doped Zinc Oxide Thin Films Grown by Low Cost Modified SILAR Method," International Journal of Thin Film Science and Technology: Vol. 3 : Iss. 2 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol3/iss2/6