We deposit n-type CdS & ZnS semiconductor films on different substrates by simple and inexpensive chemical bath deposition technique (CBDT). We record X-ray diffraction pattern and SEM of the developed samples. It is found that, the average grain size for CdS & ZnS film is in between 24nm and 65nm. It is observed that the energy band structure and band gaps get changed because of the change in the grain size of the sample in the films. The physical conditions were kept identical while growing all the samples. We predict that the difference in grain size of CdS and ZnS in thin films may be because of the binding energy of cadmium and zinc in the molecules of CdSO4 and Zn(CH3COO)2. The investigation of the effect of the technique of synthesis on the grain size and the effect of grain size on the properties of semiconductor is under consideration.
Wagh, S.P. and B. Sanap, Vijay
"Development of n-type CdS and ZnS Nanostructured Semiconductors for Solar Cell Applications,"
International Journal of Thin Film Science and Technology: Vol. 3
, Article 1.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol3/iss3/1