Growth of Industrial Scale Nanocrystalline TiN Film using Cylindrical Magnetron System

Authors

R. Rane, FCIPT, Institute for Plasma Research, Gandhinagar-382044, IndiaFollow
M. Ranjan, FCIPT, Institute for Plasma Research, Gandhinagar-382044, IndiaFollow
P.A. Rayjada, FCIPT, Institute for Plasma Research, Gandhinagar-382044, IndiaFollow
S. Mukherjee, FCIPT, Institute for Plasma Research, Gandhinagar-382044, IndiaFollow

Abstract

Development of large area industrial scale Nanocrystallite TiN thin films, using indigenously developed cylindrical magnetron sputtering (CMS) system is reported. Initially experimental parameters were optimized on 10 x 10 mm Si (111) sample and then same parameters were implemented over 220 x 110 mm large area ceramic tile. Effect of nitrogen flow rates (1.8-3.0 sccm) and substrate biases (0-120 V), on thin film growth has been investigated. Crystallite size, phase orientation, morphology and sheet resistivity of the film have been analyzed using XRD, SEM, AFM and four probe techniques, respectively. Grown TiN films found to have (111) preferred orientation phase. Average crystallite size calculated using Scherrer formula lies in the range of 15-30 nm. Nitrogen flow rates and substrate biases found to have strong influence on surface morphology and size of crystallite. Film become coarse for increasing nitrogen flow rates and denser for increasing substrate bias, respectively. Sheet resistivity of the films ranges from 80 to 300 µΩ.cm. Measurement indicates higher electrical resistivity of the films deposited using higher nitrogen flow rate.

Recommended Citation

Rane, R.; Ranjan, M.; Rayjada, P.A.; and Mukherjee, S. (2014) "Growth of Industrial Scale Nanocrystalline TiN Film using Cylindrical Magnetron System," International Journal of Thin Film Science and Technology: Vol. 3 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol3/iss3/3