AlxGa1-xN thin films were deposited on ultrasonically cleaned glass substrates by thermal evaporation technique in a vacuum of about 2ɯ10 torr. X-ray diffraction, Raman spectroscopy, and SEM (scanning electron microscope) were used to characterize nanocrystalline thin films. X-ray diffraction study showed that, all the films have the hexagonal wurtzite structure, with lattice constants a=b=4.142, c=6.724A˚. Crystallite sizes calculated from Scherrer relation are in the range of 54.83-62.93 nm. Raman spectroscopy showed that the product were hexagonal wurtzite CdS with the 1st and 2nd harmonic modes at 300.1 and 601.34 cm-1 respectively. The optical properties of the nanocrystalline were investigated by the UV-VIS-NIR absorption spectroscopy. The band gap of the films was found to be 2.42 eV.
RamaMurthy, Vedam; Srivani, Alla; and Krishna Kumari, G
"Synthesis and Applications of AlxGa1-xN Semiconductor thin Films in Optoelectronic Devices.,"
International Journal of Thin Film Science and Technology: Vol. 4
, Article 2.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss1/2