Synthesis and Applications of AlxGa1-xN Semiconductor thin Films in Optoelectronic Devices.

Authors

Vedam RamaMurthy, T. J. P. S College, Guntur, Andhra Pradesh, India.Follow
Alla Srivani, Vasi Reddy Venkatadri Institute of Technology (VVIT), IndiaFollow
G Krishna Kumari, NRI Engineering college, Guntur, Andhra Pradesh, India.Follow

Abstract

AlxGa1-xN thin films were deposited on ultrasonically cleaned glass substrates by thermal evaporation technique in a vacuum of about 2ɯ10 torr. X-ray diffraction, Raman spectroscopy, and SEM (scanning electron microscope) were used to characterize nanocrystalline thin films. X-ray diffraction study showed that, all the films have the hexagonal wurtzite structure, with lattice constants a=b=4.142, c=6.724A˚. Crystallite sizes calculated from Scherrer relation are in the range of 54.83-62.93 nm. Raman spectroscopy showed that the product were hexagonal wurtzite CdS with the 1st and 2nd harmonic modes at 300.1 and 601.34 cm-1 respectively. The optical properties of the nanocrystalline were investigated by the UV-VIS-NIR absorption spectroscopy. The band gap of the films was found to be 2.42 eV.

Recommended Citation

RamaMurthy, Vedam; Srivani, Alla; and Krishna Kumari, G (2015) "Synthesis and Applications of AlxGa1-xN Semiconductor thin Films in Optoelectronic Devices.," International Journal of Thin Film Science and Technology: Vol. 4 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss1/2