A substitutional solid solution of Zn1-xCdxTe (Zinc Cadmium Telluride, ZCT) is considered as a third generation detector and an important photovoltaic material in material science. This paper describes a methodology to prepare ZCT for the first time using a chemical deposition technique at 353K temperature. The reactive homogeneous bath solution was prepared by mixing ammonia complexed mercuric nitrate, cadmium nitrate and a metastable sodium tellurosulphate (Na2TeSO3) at 353K temperature. The substrates were rotated with a low speed of 45 rpm in the reactive bath. A slow rise in temperature to 383K in a span of 3 hours gives rise ZCT film. We observe formation of ZCT film only in hot condition and with the use of freshly prepared Sodium tellurosulphate. The Zn1-xCdxTe deposited film was characterized by X-ray diffraction, optical absorption, electrical, conductivity, scanning electron microscope and EDAX measurements. The film was polycrystalline in a single cubic phase with average crystallites size of 300?. The optical band gap of 0.83 eV obeying direct transition law was observed. The film showed n- type conduction mechanism.
Rama Murthy, Vedam; Srivani, Alla; and Krishna Kumari, G
"Synthesis and Characterization of Zn1-xCdxTe Ternary Semiconductor Thin Films,"
International Journal of Thin Film Science and Technology: Vol. 4
, Article 4.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss1/4