Cd – Sn oxide films from precursor sol of three different compositions (Cd: Sn = 70 : 30, 50 : 50 and 30 : 70) were deposited on SLS and pure silica glass by sol-gel spinning technique. XRD study revealed presence of desirable spinel Cd2SnO4 phase along with some unwanted phases in films derived from Cd : Sn = 50 : 50 and 30 : 70 precursor sol. SEM study showed presence of Sn metallic phase in nano–rod shape in film derived from Cd : Sn = 70 : 30 precursor. Direct band gap of the films varied from 3.27 to 3.56 eV whereas indirect band gap varied from 2.03 to 2.14 eV. Blue shift of band gap with respect to that of bulk was observed. Percentage of transmission at 0.55 m varied between 60 to 86%. Hall mobility and carrier concentration of the films were in the ranges 0.30 to 3.79 cm2 / Vs and 0.41 x 1019 to 7.05 x 1019 cc-1 respectively. Sheet resistance varied within the range from 3 kΩ / – 13.8 kΩ/ whereas resistivity varied from 8.49 x 10-2 to 70.27 x 10-2 Ω cm. Film derived from Cd : Sn = 50 : 50 precursor sol showed maximum transmission at 0.55 m and minimum two probe resistivity.
"Study of Sol-Gel Derived Spin Coated Cd – Sn Oxide Films on Glass,"
International Journal of Thin Film Science and Technology: Vol. 4
, Article 4.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss2/4