Ti doped indium oxide thin films (I n2 O3 :Ti) were prepared at different temperatures by a simplified spray pyrolysis technique using perfume atomizer technique. The effect of substrate temperature on structural, electrical, photoluminesence and optical properties of these films have been analyzed and reported here. The XRD analysis revealed that the films possess polycrystalline with cubic bixbyite structure and the preferred orientation being in (2 2 2) direction. The grain size of the films varied from 31 nm to 55 nm with the increase of substrate temperature from 300o C to 400o C, thereafter it decreased with further increase of substrate temperature to 450˚ C. Optical parameters such as transmittance, absorption coefficient, refractive index and band gap have been studied and analyzed as a function of substrate temperature. Compared to other deposition temperatures (300o C, 400o C and 450o C) a film prepared at 350o C has exhibited a low electrical resistivity of 1.26 ×10−4 Ω cm, high mobility 66 cm2 /V s and carrier concentration 3.46 ×1020 cm−3 with 75 % of transmittance in the wavelength ranging between 400 nm - 1100 nm. An efficient photoluminescence emission was recorded for all the samples in the wavelength region of 300 nm - 600 nm which confirmed that these films are suitable for potential applicability in nanoscale optoelectronic devices.
Sivaranjani, V. and Philominathan, P.
"Influence of Substrate Temperature on Physical Properties of Nanostructured Ti Doped In2O3 Thin Films by a Simplified Perfume Atomizer Technique,"
International Journal of Thin Film Science and Technology: Vol. 4
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Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss3/11