Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into the growth mechanisms of the films. 3D island growth attributed to volmer Weber epitaxial growth followed by dewetting due to higher surface energy was observed. A modelling has been done on the epitaxial thin film growth with sputtering process. The parameters during sputtering like, sputtering yield, pressure, temperature, current density, deposition time were related and an attempt has been made to analyse the sputtering process.
S. Bhattacharyya, A.; Kumar, S.; Jana, S.; Y. Kommu, P.; K.Gaurav; and Prabha, S.
"Sputter based Epitaxial Growth and Modeling of Cu/Si Thin Films,"
International Journal of Thin Film Science and Technology: Vol. 4
, Article 3.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss3/3