Comparative Study of Magnetization of Co Thin Films Deposited on Glass, GaAs (001) and Si (001) Substrates

Authors

Md. Nahid Akter Shafi, Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh.Follow
Md. Abdur Rahim, Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh.Follow
Md. Nure Alom Siddiquy, Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh.Follow
Md. Kamrul Hasan, Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh.Follow
Md. Johurul Islam, Department of Applied Physics and Electronic Engineering, University of Rajshahi, Rajshahi-6205, Bangladesh.Follow

Abstract

The effect of surface induced anisotropy and interfacial anisotropy on the magnetic properties of Co thin films have been presented. The surface roughness of 100 nm Co film on both the glass and Si (001) substrate is found to be ~ 50 Oe. But the surface roughness of the same thick Co film on GaAs (001) substrate is enhanced to ~ 80 Oe. The enhancement of coercivity of Co thin film on GaAs (001) substrate is due to the special interaction between transition metal Co and GaAs (001). The anisotropy field due to the cobalt silicide interface is responsible for large saturation field required to saturate the Co/Si sample. The squareness of Co thin film on both the glass and GaAs (001) is ~ 1. On the other hand, it is reduced to 0.45 for Co/Si system. Both the surface induced and interfacial anisotropy fields influence the shape of the hysteresis loop.

Recommended Citation

Nahid Akter Shafi, Md.; Abdur Rahim, Md.; Nure Alom Siddiquy, Md.; Kamrul Hasan, Md.; and Johurul Islam, Md. (2015) "Comparative Study of Magnetization of Co Thin Films Deposited on Glass, GaAs (001) and Si (001) Substrates," International Journal of Thin Film Science and Technology: Vol. 4 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss3/6