In this paper, porous silicon layers was prepared from p-type silicon with orientation (100) by electrochemical etching method , samples were anodized in a solution of 48% HF and 99% C2H2OH at 1:1 ratio and study the morphology properties of PSi samples by changing etching time (15, 17 and 20) min for fixed (11.5 mA/ cm2) current density, and imaged PSi sample in Atomic force microscopy(AFM), which shows the rough silicon surface, with increasing etching process (etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increases and we found that the porosity of PSi increasing with the increasing etching time. The XRD measurements has confirmed the crystallinity nature of porous silicon. A broad peak of blue emission has also confirmed by photoluminescence (PL) measurements and it has been attributed to SiHx groups which are confirmed by FTIR spectra. Chemical fictionalization during the electrochemical etching show on surface chemical composition of PSi. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PSi layers have large amount of Hydrogen to form weak Si–H bonds.
G. Kadhim, Raheem; A. Ismail, Raid; and M. Abdulridha, Wasnaa
"Structural, Morphological, Chemical and Optical Properties of Porous Silicon Prepared By Electrochemical Etching,"
International Journal of Thin Film Science and Technology: Vol. 4
, Article 7.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss3/7