Ion Beam Synthesis of Cobalt Silicide Layers in Si(111)

Authors

Ayache Rachid, Pharmacy Department, University of Batna, Batna, 05000, Algeria.Follow
Sidoumou Mohamed, Physics Department, Faculty of Sciences, University of Blida, Blida, 09000, BP 270, Algeria.Follow
Kolitsch Andreas, Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, GermanyFollow

Abstract

Thin CoSi2 layers are formed by 195 keV Co ion implantation in Si(111) substrates to a dose of 2 × 1017 Co+/cm2 at room temperature (RT) followed by annealing in N2 atmosphere at different temperatures during 1 h are investigated. The characterizations of the as-implanted and annealed samples are performed using Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD). Also the obtained samples have been characterized by means of Raman spectroscopy. The results show that the CoSi2 phase is polycrystalline with a random crystallographic orientation.

Recommended Citation

Rachid, Ayache; Mohamed, Sidoumou; and Andreas, Kolitsch (2015) "Ion Beam Synthesis of Cobalt Silicide Layers in Si(111)," International Journal of Thin Film Science and Technology: Vol. 4 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss3/9