Thin CoSi2 layers are formed by 195 keV Co ion implantation in Si(111) substrates to a dose of 2 × 1017 Co+/cm2 at room temperature (RT) followed by annealing in N2 atmosphere at different temperatures during 1 h are investigated. The characterizations of the as-implanted and annealed samples are performed using Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD). Also the obtained samples have been characterized by means of Raman spectroscopy. The results show that the CoSi2 phase is polycrystalline with a random crystallographic orientation.
Rachid, Ayache; Mohamed, Sidoumou; and Andreas, Kolitsch
"Ion Beam Synthesis of Cobalt Silicide Layers in Si(111),"
International Journal of Thin Film Science and Technology: Vol. 4
, Article 9.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol4/iss3/9