Growth of ITO Films by Modified Chemical Vapor Deposition Method

Authors

I. G. Atabaev, Physical Technical Institute, Uzbek Academy of Sciences, 100084 Tashkent, Uzbekistan.Follow
M. U. Hajiev, Physical Technical Institute, Uzbek Academy of Sciences, 100084 Tashkent, Uzbekistan.Follow
V. A. Pak, Physical Technical Institute, Uzbek Academy of Sciences, 100084 Tashkent, Uzbekistan.Follow

Abstract

Growth of ITO films on glass substrate by modified CVD method in quasi closed space with separate evaporator for formation of saturated vapor phase is investigated. The growth rate of ITO films was an order 0,5-1,0 micron/hour it is several times above than for conventional spray-pyrolysis in similar conditions. The lattice absorption spectra of fabricated ITO films shown that materials grown in temperature interval 170-500?C have identical structure, have no inclusions of secondary phase and uniform. IR absorption band in the range of 2500-3800 cm-1 which amplitude has correlation with conductivity of ITO films is found out.

Recommended Citation

G. Atabaev, I.; U. Hajiev, M.; and A. Pak, V. (2016) "Growth of ITO Films by Modified Chemical Vapor Deposition Method," International Journal of Thin Film Science and Technology: Vol. 5 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol5/iss1/2