In this study we compare the influence of chemical composition and microstructural defects on the resistivity of NixCu1-x film alloys. The relative variation of the resistivity of NixCu1-x bulk alloy by nickel atom substituted is the same than that in a NixCu1-x alloy film. When the density of randomly distributed defects increases, with an average distance between electronic scattering centers comparable to the mean free path of electrons at the Fermi level, the resistivity reaches its maximum. Near the ambient temperature the maximum of resistivity of NixCu1-x alloy films is obtained for an atomic composition of nickel equal to 60 %. Near the ambient temperature the minimum of the temperature coefficient of resistivity in NixCu1-x alloy films is obtained for an atomic composition (46 ± 2)% of nickel.
K. Loudjani, M. and Sella, C.
"Resistivty of NixCu1-x Alloy Films,"
International Journal of Thin Film Science and Technology: Vol. 5
, Article 4.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol5/iss1/4