Indium oxide (InOx) films with a thickness of 50–150 nm were deposited onto glass substrate by electron beam evaporation technique. As-deposited InOx films were annealed in air at 575K for 3 hours and characterized by Scanning Electron Microscopy (SEM), electrical and optical measurements. SEM study of the film of thickness 50 nm revealed that the surfaces are distributed uniformly throughout the film with the uniform small grains. Temperature dependence of electrical resistivity was measured in the temperature range 300-475K. The decrease in resistivity with the increase of temperature indicates that InOx films are semiconducting in nature. The reduction in the resistivity with temperature might be associated with thermally activated conduction mechanism. The behavior of resistivity and so also the activation energy of annealed InOx thin films depend on thickness. From Hall study, it is observed that the films exhibit n-type electrical conductivity with carrier concentration of about 1025 m-3. The absorption coefficient was calculated from the transmittance measurements. The direct optical band gap is found to vary from 3.60 to 3.72 eV as the thickness increased from 50 to 150 nm.
Ariful Islam, Md.; C. Roy, R.; Hossain, J.; Julkarnain, M.; and A. Khan, K.
"Investigation of Electrical and Optical Transport Properties of Annealed InOx Thin Films,"
International Journal of Thin Film Science and Technology: Vol. 5
, Article 6.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol5/iss1/6