Compound Semiconductor Epitaxial Growth Techniques

Authors

Md. Momtazur Rahman, Department of Energy Science & Technology, University of Ulm, Helmholtzstra?e 18, 89081 Ulm, Germany.Follow
Md. Nazmul Hasan, Department of Mechanical Engineering, National Cheng Kung University, University Road, 701 Tainan, Taiwan.Follow

Abstract

The aim of this paper is to review the different growth techniques used for compound semiconductor epitaxial layer growth, including LPE, HVPE, MOVPE, MOCVD, MBE & their reasonable comparison. As the compound semiconductor have elegant characteristics, so recently different semiconductor and its alloys becoming great importance in many applications due to its variable band gap properties. We can change its properties by changing temperature, doping & carrier concentration, & most importantly the performance of semiconductor devices strongly dependent on precious control of growth techniques. So, the choice of efficient growth techniques by accumulating with the proper doping we can get high quality semiconductor device, as well high power and high temperature electronics devices.

Recommended Citation

Momtazur Rahman, Md. and Nazmul Hasan, Md. (2016) "Compound Semiconductor Epitaxial Growth Techniques," International Journal of Thin Film Science and Technology: Vol. 5 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol5/iss1/7