Effects of Annealing and Oxygen/Nitrogen Ratio on Transmittance of Copper Oxynitride Thin Films

Authors

Abraham Kirwa Tuwei, Chuka University, Department of Physical Science, P.O. Box 109- 60400 Chuka, KenyaFollow
Daniel Kipngetich Ketui, Harbin Engineering University, Heilongjiang Province, 145 Nantong Street, Harbin, 150001, P.R. China.Follow
Samson Muriuki Njogu, Department of Physical Science, Chuka University P.O. Box 109- 60400 Chuka. KenyaFollow

Abstract

Copper oxynitride (CuOyNx) thin films were deposited on glass substrates by dc reactive magnetron sputtering at room temperature and a pressure of 5 x 10-3 mbar with varying oxygen and nitrogen concentrations concurrently on each film for 10 minutes. The oxygen concentration was increased from 2 sccm, 4 sccm, 6 sccm, 8 sccm and 10 sccm while that of nitrogen was reduced from 8 sccm, 6 sccm, 4 sccm, 2 sccm and 0 sccm. The copper oxynitride thin films formed were annealed at 200 0C and 300 0C and their optical properties measured. We observed that at oxygen to nitrogen ratio of 8:2, there is a pronounced shifted of transmittance peak of CuOyNx from 610 nm to 810 nm for As-deposited and those annealed at 300 0C. We concluded that CuOyNx has tunable optical properties.

Recommended Citation

Kirwa Tuwei, Abraham; Kipngetich Ketui, Daniel; and Muriuki Njogu, Samson (2016) "Effects of Annealing and Oxygen/Nitrogen Ratio on Transmittance of Copper Oxynitride Thin Films," International Journal of Thin Film Science and Technology: Vol. 5 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol5/iss1/8