Sn doped CdS thin films were grown onto glass substrates through Ultrasonic Spray Pyrolysis technique. The effect of the Sn dopant on the optical and structural properties of CdS films was investigated. Undoped and doped CdS films presented a hexagonal structure. The band gap of each film was calculated as 2.43 eV by using transmission spectra. The electrical analysis proved the improvement in resistance by increasing Sn dopant atoms in CdS lattice. All the CdS:Sn films were evaluated as a potential window material for heterojunction solar cells.
Deniz Eygi, Zeynep; Demirselçuk, Barbaros; and Bilgin, Vildan
"Influence of Sn Doping on Cds Thin Film Grown by Ultrasonic Spray Pyrolysis,"
International Journal of Thin Film Science and Technology: Vol. 5
, Article 4.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol5/iss2/4