Many theoretical and experimental works are made on the wurtzite phase of indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN), and their Ternary alloys. On the other side, few experimental data exist for their cubic phases where as theoretical studies show they are performing more interesting. Inclusive depiction of III-Nitride Semiconductors is demonstrated and consequence of existent Research is emphasised. The Electrical and Optical properties of III-Nitrides from binary Semiconductors are appraised using the Principle of additivity comprising quadratic expressions. The Electrical and Optical properties learned in this group restrain Refractive index, Optical polarizability, Absorption coefficient and Energy gap. A similarity of these data is made with reported information facts wherever attainable. The worth of current displayed method build from refractive indices with out need for refined experimental methods is stressed. The beneficial of this Nitride Group Alloys is also summarized.
Rama Murthy, Vedam; Srivani, Alla; and Veera raghavaiah, G
"Physical Studies in III-Nitride Semiconductor Alloys,"
International Journal of Thin Film Science and Technology: Vol. 6
, Article 3.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol6/iss1/3