In this paper we analysed convective diffusion processes in vertical and horizontal reactors for epitaxy from gas phase with disk substrate holder at atmosphere and low (~0.1 atmosphere) pressure. We formulate conditions to improve properties of grown structure. We introduce an analytical approach to solve equations of convective diffusion. We apply the obtained results for MOCVD of gallium arsenide. Epitaxy MOCVD could be used to growth of nanoscale semiconductor structures (quantum pits; arrays of quantum pits; structures with two-dimensional electronic gas). The same procedure could be also used to growth structures with higher dimensions.
Pankratov, E.L. and E.A.Bulaeva
"Modelling Mass and Heat Transport during Gas Phase Epitaxy in a Reactor with Rotating Substrate. On Possibility to Improve Of Properties of Films,"
International Journal of Thin Film Science and Technology: Vol. 6
, Article 1.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol6/iss2/1