Thin films of tin disulphide (SnS2) were deposited on glass substrates by spray pyrolysis technique using precursor solutions of SnCl2.2H2O and n-n dimethyl thiourea at different substrate temperatures varied in the range 473 – 573 K. Using the hot probe technique the type of conductivity is found to be n type. X ray diffraction revealed the polycrystalline nature with increasing crystallinity with respect to the different substrate temperature. The preferrential orientation growth of compound having (002) plane belongs to the hexagonal crystal structure. The size of the crystallites was determined using FWHM values of the Bragg peaks and found to increase with the substrate temperature. The direct energy band gap values are found to be increased with the increasing substrate temperature. The room temperature resistivity values are decreased with increasing substrate temperature in order of 105 Ω-cm.
Gopalakrishnan, P.; Anbazhagan, G.; J. Vijayarajasekaran, ,; and Vijayakumar, K.
"Effect of Substrate Temperature on Tin Disulphide Thin Films,"
International Journal of Thin Film Science and Technology: Vol. 6
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Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol6/iss2/4