International Journal of Thin Film Science and Technology
![International Journal of Thin Film Science and Technology](/assets/md5images/6241ecdd7bd79652f8308cd29bc19774.jpg)
Abstract
Copper gallium sulphide films were deposited for the first time by the brush plating technique at different electrolyte temperatures in the range of 30°C - 80°C and at a constant deposition current density of 5.0 mA cm-2. X-ray diffractograms of the films are single phase with chalcopyrite structure. EDAX measurements indicated that the Cu/Ga ratio decreased from 1.29 to 1.00 as the electrolyte temperature increased from 30°C - 80°C. The grain size increased with increase of electrolyte temperature. The grain size increases from 100 nm to 300 nm as the electrolyte temperature increases.
Recommended Citation
Kajamaideen, B.; Panneerselvam, A.; and R. Murali, K.
(2017)
"Brush Plated Copper Gallium Sulphide Films and their Properties,"
International Journal of Thin Film Science and Technology: Vol. 6
:
Iss.
2
, PP -.
Available at:
https://digitalcommons.aaru.edu.jo/ijtfst/vol6/iss2/5