Microstructural and Electrical Characterization of Pt/Si Nanowires Schottky Diode Grown by Metal Assisted Chemical Etching Method

Authors

Bukke Naresh Naik, Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, IndiaFollow
Lucky Agarwal, Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, IndiaFollow
Shweta Tripathi, Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, IndiaFollow

Abstract

In this report, microstructural and electrical parameters have been evaluated for Pt/Si nanowires Schottky nanocontact, grown by metal-assisted chemical etching method. Schottky contact has been formed by placing a platinum conducting tip of STM at an optimized distance (in Armstrong) from the peak of SiNWs. At an optimized separation between the tip and silicon nanowires, resulting I-V characteristic shows it rectifying behaviour. Ideality factor has been evaluated as 3.7 and reverse breakdown voltage is -5V.

Recommended Citation

Naresh Naik, Bukke; Agarwal, Lucky; and Tripathi, Shweta (2017) "Microstructural and Electrical Characterization of Pt/Si Nanowires Schottky Diode Grown by Metal Assisted Chemical Etching Method," International Journal of Thin Film Science and Technology: Vol. 6 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol6/iss3/2