In this report, microstructural and electrical parameters have been evaluated for Pt/Si nanowires Schottky nanocontact, grown by metal-assisted chemical etching method. Schottky contact has been formed by placing a platinum conducting tip of STM at an optimized distance (in Armstrong) from the peak of SiNWs. At an optimized separation between the tip and silicon nanowires, resulting I-V characteristic shows it rectifying behaviour. Ideality factor has been evaluated as 3.7 and reverse breakdown voltage is -5V.
Naresh Naik, Bukke; Agarwal, Lucky; and Tripathi, Shweta
"Microstructural and Electrical Characterization of Pt/Si Nanowires Schottky Diode Grown by Metal Assisted Chemical Etching Method,"
International Journal of Thin Film Science and Technology: Vol. 6
, Article 2.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol6/iss3/2