Models of Electric Transport in Bilayer Ni/Cu And in a Tri-layer Ni/Pd/Cu Thin Films

Authors

M. K. Loudjani, Université Paris-Saclay, ICMMO-UMR 8182 (CNRS), SP2M-Bâtiment 410, 91405 Orsay Cedex, France.Follow
C. Sella, Institut des Nano-Sciences de Paris, Université de Paris-VI, campus Boucicaut, 140 rue de Lourmel 75015 Paris, France.Follow

Abstract

In this work we propose to measure the resistivities of bilayer Ni/Cu and tri-layer Ni/Pd/Cu thin films. We will compare the experimental resistivity of bilayer Ni/Cu or a tri-layerNi/Pd/Cu to the resistivity calculated from the resistivities of the simple layers of copper, nickel and palladium. We show that in the presence of aconstantelectric fieldparallel to the interface of Ni/Cu, electronic transport in bilayer, is equivalent to that of two distinct layers (of Ni and Cu) laid out in two parallel circuits, and that of a tri-layer Ni/Pd/Cu is equivalent to that the electronic transport of three distinct layers (of Ni, Pd and Cu) laid out in three parallel circuits.

Recommended Citation

K. Loudjani, M. and Sella, C. (2017) "Models of Electric Transport in Bilayer Ni/Cu And in a Tri-layer Ni/Pd/Cu Thin Films," International Journal of Thin Film Science and Technology: Vol. 6 : Iss. 3 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol6/iss3/3