Variation of Distribution of Concentration of Implanted Impurity with into Account Mismatch-Induced Stresses under Influence of Variation of Substrate Temperature

Authors

E. L. Pankratov, Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russia.Follow

Abstract

In this paper, an analysis is made of the mutual effect of radiation damage to the heterostructure during ion doping, substrate temperature during doping, and mismatch-induced stresses.

Recommended Citation

L. Pankratov, E. (2019) "Variation of Distribution of Concentration of Implanted Impurity with into Account Mismatch-Induced Stresses under Influence of Variation of Substrate Temperature," International Journal of Thin Film Science and Technology: Vol. 8 : Iss. 1 , PP -.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol8/iss1/3