International Journal of Thin Film Science and Technology
![International Journal of Thin Film Science and Technology](/assets/md5images/6241ecdd7bd79652f8308cd29bc19774.jpg)
Abstract
In this paper, an analysis is made of the mutual effect of radiation damage to the heterostructure during ion doping, substrate temperature during doping, and mismatch-induced stresses.
Recommended Citation
L. Pankratov, E.
(2019)
"Variation of Distribution of Concentration of Implanted Impurity with into Account Mismatch-Induced Stresses under Influence of Variation of Substrate Temperature,"
International Journal of Thin Film Science and Technology: Vol. 8
:
Iss.
1
, PP -.
Available at:
https://digitalcommons.aaru.edu.jo/ijtfst/vol8/iss1/3