In this paper, an analysis is made of the mutual effect of radiation damage to the heterostructure during ion doping, substrate temperature during doping, and mismatch-induced stresses.
L. Pankratov, E.
"Variation of Distribution of Concentration of Implanted Impurity with into Account Mismatch-Induced Stresses under Influence of Variation of Substrate Temperature,"
International Journal of Thin Film Science and Technology: Vol. 8
, Article 3.
Available at: https://digitalcommons.aaru.edu.jo/ijtfst/vol8/iss1/3